A Simplified SiC MOSFET Model for an Abstract View of the Switching Performance

Power semiconductors are a crucial component and a key driver of power electronics. Device modelling is an essential approach to formulating and analyzing the static and dynamic characteristics of power semiconductors. This paper proposes a simplified analytical model for a SiC MOSFET and Schottky barrier diode in a half-bridge configuration. This simplified model is shown to have better interpretability and computational speed, by comparing it with two other commonly used analytical models for benchmarking purpose at different operating points and parasitic inductance. Finally, the intended use case and limitations are discussed.<p></p>