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The Gate Inductance Influence on IGBT Switching Performance Under Current and Voltage Gate Drivers

conference contribution
posted on 2024-07-08, 11:51 authored by Shuai Ding, Bing Ji, Zhiqiang Wang, Kun Tan, Wenping Cao

 The performance of IGBTs directly affects system efficiency, power density, and reliability. Gate drivers can be used to control IGBTs by managing their gate voltage and gate current. This study compares current-source and voltage-source gate drivers and their effects on IGBT switching behaviours. The results show that IGBT is more resilient to interference with current-source gate drivers. 

History

Author affiliation

College of Science & Engineering Engineering

Source

2023 International Joint Conference on Energy, Electrical and Power Engineering (CoEEPE 2023), 22nd to 24th November 2023 Melbourne, Australia

Version

  • AM (Accepted Manuscript)

Published in

Conference Proceedings of the 2023 3rd International Joint Conference on Energy, Electrical and Power Engineering. CoEEPE 2023.

Publisher

Springer Nature Singapore

issn

1876-1100

eissn

1876-1119

isbn

9789819739394

Copyright date

2024

Available date

2025-06-22

Book series

Lecture Notes in Electrical Engineering, vol 1208

Temporal coverage: start date

2023-11-22

Temporal coverage: end date

2023-11-24

Language

en

Deposited by

Dr Bing Ji

Deposit date

2024-07-01

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