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Dielectric breakdown at sub-critical fields

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journal contribution
posted on 2019-08-20, 13:54 authored by Zhou Zuo, L. A. Dissado, N. M. Chalashkanov, S. J. Dodd, Chenguo Yao
We present a quantitative physical model based on experimentally determined parameter values for the description of the way that dielectric breakdown occurs after a period of stressing at fields below the critical values required for deterministic theories. It is found that for most of the material lifetime isolated regions of deterioration occur and that breakdown only ensues when the field in one such region reaches a critical value that produces a runaway extension. Only at low fields, do the deteriorated regions link up to form a conducting short-circuit. The generic form used means that the theory can be adapted for different physical mechanisms, and its concepts can be applied to the electrical reliability of many different types of dielectrics in a wide range of applications.

Funding

Zhou Zuo and Chenguo Yao acknowledge the support of the National Natural Science Foundation of China Grant No. 51321063 for this work.

History

Citation

Applied Physics Letters, 2018, 113, 112901

Author affiliation

/Organisation/COLLEGE OF SCIENCE AND ENGINEERING/Department of Engineering

Version

  • VoR (Version of Record)

Published in

Applied Physics Letters

Publisher

AIP Publishing

issn

0003-6951

eissn

1077-3118

Acceptance date

2018-08-27

Copyright date

2018

Available date

2019-09-11

Language

en

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