posted on 2014-07-18, 10:45authored byJohn E. Lees, Sarah L. Bugby, C. Scoular, L. Boie
A variety of new types of detectors based on wide band gap materials have been developed for soft X-ray spectroscopy applications (e.g. GaAs, SiC, diamond). In this report we describe the spectroscopic performance of a simple p-i-n diode fabricated on AlGaAs. The energy response of the diode, operating in photon counting mode, at room temperature has been investigated using fluorescence from a number of high purity materials. X-ray spectra over the energy range 5 keV-25 keV show this type of diode can be used for spectroscopy with promising energy resolution ( ∼ 1.3 keV) at 30°C and excellent linearity.
History
Citation
Journal of Instrumentation, 2014, 9 (5), P05003
Author affiliation
/Organisation/COLLEGE OF SCIENCE AND ENGINEERING/Department of Physics and Astronomy