posted on 2013-03-27, 14:11authored byM.R. Connolly, E.D. Herbschleb, R.K. Puddy, Mervyn Roy, D. Anderson, G.A.C. Jones, P. Maksym, C.G. Smith
We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over a graphene-metal interface and detecting a shift in the local charge neutrality point. We perform electrostatic simulations to characterize the interaction between a realistic scanning probe tip, the deposited charge, and the graphene and find a good semi-quantitative agreement with the experimental results.
History
Citation
Applied Physics Letters, 2012, 101 (2), 3505 (4)
Author affiliation
/Organisation/COLLEGE OF SCIENCE AND ENGINEERING/Department of Physics and Astronomy