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Temperature dependence of the average electron-hole pair creation energy in Al[subscript 0.8]Ga[subscript 0.2]As

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posted on 2013-10-11, 14:56 authored by Anna M. Barnett, John E. Lees, David J. Bassford
The temperature dependence of the average energy consumed in the creation of an electron-hole pair in the wide bandgap compound semiconductor Al[subscript 0.8]Ga[subscript 0.2]As is reported following X-ray measurements made using an Al[subscript 0.8]Ga[subscript 0.2]As photodiode diode coupled to a low-noise charge-sensitive preamplifier operating in spectroscopic photon counting mode. The temperature dependence is reported over the range of 261 K–342K and is found to be best represented by the equation ε[subscript AlGaAs]=7.327–0.0077 T, where ε[subscript AlGaAs] is the average electron-hole pair creation energy in eV and T is the temperature in K.

Funding

The authors acknowledge financial support received in the form of UK Science and Technology Facilities Council grants ST/H000143/1 and ST/K00025X/1 which supported this work.

History

Citation

Applied Physics Letters, 2013, 102 (18), 181119

Version

  • VoR (Version of Record)

Published in

Applied Physics Letters

Publisher

American Institute of Physics (AIP)

issn

0003-6951

eissn

1077-3118

Available date

2013-10-11

Publisher version

http://apl.aip.org/resource/1/applab/v102/i18/p181119_s1

Language

en

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